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AEM

2N4390

120V,.5A,375mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
850 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.75 V
Case Type
TO-18
Collector-Base Breakdown Voltage (BVCBO)
120 V
Collector-Base Voltage
120 V
Collector-Emitter Breakdown Voltage (BVCEO)
120 V
Collector-Emitter Cutoff Current (ICEV)
1 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Voltage (VCEO)
120 V
Continuous Collector Current
500 mA
Current Gain-Bandwidth Product (fT)
50 MHz
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
20 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Voltage
6 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 175 °C
Output Capacitance (Cob)
6 pF
Power Dissipation
375 mW
Storage Temperature (Tstg)
-65 — 175 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active120V,.5A,375mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/SwitchBox2,000PBFREE

Resources

ItemType
Analytical Test Report:Bond WireAnalytical Test Report
Analytical Test Report:CapAnalytical Test Report
Analytical Test Report:HeaderAnalytical Test Report
Analytical Test Report:Header AssemblyAnalytical Test Report
Analytical Test Report:Pure Tin SolderAnalytical Test Report
LSSGP057.PDFDevice Datasheet
Material Composition:TO-18Material Composition
Package Detail Document:TO-18Package Detail Document
Product Reliability Data:TO-18 Package ReliabilityProduct Reliability Data

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