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2N4410

80V,250mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch

Specifications

Base-Emitter On Voltage (VBE(ON))
0.8 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.8 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
120 V
Collector-Base Cutoff Current (ICBO)
1000 nA
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Voltage
120 V
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Voltage (VCEO)
80 V
Collector-Emitter Voltage (BVCEX)
120 V
Continuous Collector Current
250 mA
Current Gain-Bandwidth Product (fT)
60 — 300 MHz
DC Current Gain (hFE)
60 — 400 x10³
DC Current Gain (hFE)
60 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
50 pF
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
12 pF
Power Dissipation
625 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
200 °C/W
Thermal Resistance Junction-Case
83.3 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active80V,250mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/SwitchBox2,500TINNo
Active80V,250mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/SwitchAmmo2,000LEAD or TINNo
Active80V,250mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/SwitchAmmo2,000LEAD or TINNo
Active80V,250mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/SwitchTape & Reel2,000LEAD or TINNo

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