2N4856A
4V,10V,50mA,1.8W Through-Hole JFET N Channel
Specifications
Case Type
TO-18
Common Source Input Capacitance (Ciss)
10 pF
Common Source Reverse Transfer Capacitance (Crss)
4 pF
Continuous Gate Current
50 mA
Drain Current-Off (ID(OFF))
500000 pA
Drain Current-Off (ID(OFF))
250 pA
Drain-Gate Voltage
40 V
Drain-Source On Resistance (rds(ON))
25 Ω
Drain-Source On Voltage (VDS(ON))
750 mV
Drain-Source Voltage
40 V
ECCN Code
EAR99
Gate Leakage Current (IGSS)
500 nA
Gate Leakage Current (IGSS)
0.25 nA
Gate-Source Breakdown Voltage (BVGSS)
40 V
Gate-Source Cutoff Voltage (VGS(OFF))
4 — 10 V
Gate-Source Voltage (VGS)
40 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 200 °C
Power Dissipation
1.8 W
Rise Time (tr)
3 ns
Saturation Drain Current (IDSS)
50000 µA
Storage Temperature (Tstg)
-65 — 200 °C
Turn Off Time (toff)
20 ns
Turn-on Delay Time (tON)
5 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 4V,10V,50mA,1.8W Through-Hole JFET N Channel | Box | 2,000 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| 2N4856_A.PDF | Device Datasheet |
| Material Composition:TO-18 | Material Composition |
| Package Detail Document:TO-18 | Package Detail Document |
| Process Change Notice:CP216 REPLACES CP206 | Process Change Notice |
| Process Change Notice:CP226 REPLACE CP216 | Process Change Notice |
| Product Brief:PB JFETs | Product Brief |
| Product Reliability Data:TO-18 Package Reliability | Product Reliability Data |
| Spice Model:2N4856A | Spice Model |