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AEM

2N4938

40V,50mA,250mW Through-Hole Transistor-Small Signal (<=1A) Dual PNP General Purpose Amplifier/Switch

Specifications

Base-Emitter On Voltage Matching (|VBE1-VBE2|)
5 mV
Base-Emitter On Voltage Matching (|VBE1-VBE2|)
5 mV
Base-Emitter On Voltage Matching (|VBE1-VBE2|)
5 mV
Case Type
TO-78
Collector-Base Breakdown Voltage (BVCBO)
50 V
Collector-Base Cutoff Current (ICBO)
20 nA
Collector-Base Voltage
50 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Voltage (VCEO)
40 V
Continuous Base Current
10 mA
Continuous Collector Current
50 mA
Current Gain-Bandwidth Product (fT)
300 — 900 MHz
DC Current Gain (hFE)
50 — 250 x10³
DC Current Gain (hFE)
50 — 250 x10³
DC Current Gain (hFE)
40 — 200 x10³
DC Current Gain Matching (hFE1/hFE2)
0.8 — 1
DC Current Gain Matching (hFE1/hFE2)
0.8 — 1
DC Current Gain Matching (hFE1/hFE2)
0.8 — 1
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
20 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
10 pF
Input Impedance Common Emitter (hie)
1 — 10 kΩ
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
4 dB
Output Admittance Common Emitter (hoe)
5 — 50 µS
Output Capacitance (Cob)
5 pF
Power Dissipation
350 mW
Power Dissipation
1.2 W
Power Dissipation
2 W
Power Dissipation
250 mW
Small Signal Current Gain (hfe)
50 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Voltage Feedback Ratio Common Emitter (hre)
1 x10⁻³

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued40V,50mA,250mW Through-Hole Transistor-Small Signal (<=1A) Dual PNP General Purpose Amplifier/SwitchBox100PBFREE

Resources

ItemType
LSSGP071.PDFDevice Datasheet
Material Composition:TO-78Material Composition
Package Detail Document:TO-78Package Detail Document
Product EOL Notice:TO-78 CASEProduct EOL Notice

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