2N5038
90V,20A,140W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
3.3 V
Case Type
TO-3
Collector-Base Voltage
150 V
Collector-Emitter Breakdown Voltage (BVCEO)
90 V
Collector-Emitter Cutoff Current (ICEV)
50000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
2500 mV
Collector-Emitter Voltage (VCEO)
90 V
Collector-Emitter Voltage (VCEV)
150 V
Continuous Base Current
5 A
Continuous Collector Current
20 A
Current Gain-Bandwidth Product (fT)
60 MHz
DC Current Gain (hFE)
20 — 100 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
50000000 nA
Emitter-Base Cutoff Current (IEBO)
5000000 nA
Emitter-Base Voltage
7 V
HTS Code
8541.29.0065
Junction Temperature (Tj)
-65 — 200 °C
Peak Collector Current
30 A
Power Dissipation
140 W
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Case
1.25 °C/W
Turn Off Time (toff)
2000 ns
Turn On Time (ton)
500 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 90V,20A,140W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch | Sleeve | 20 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Cap and Assembly | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leads | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| 2N5038.PDF | Device Datasheet |
| Material Composition:TO-3 | Material Composition |
| Package Detail Document:TO-3 | Package Detail Document |
| Product EOL Notice:2N5038 | Product EOL Notice |
| Product Reliability Data:TO-3 Package Reliability | Product Reliability Data |