2N5059
250V,150mA,1W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage
Specifications
Base-Emitter On Voltage (VBE(ON))
0.82 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.85 V
Case Type
TO-39
Collector-Base Breakdown Voltage (BVCBO)
250 V
Collector-Base Cutoff Current (ICBO)
20000 nA
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage
250 V
Collector-Emitter Breakdown Voltage (BVCEO)
250 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
250 V
Continuous Collector Current
150 mA
Current Gain-Bandwidth Product (fT)
30 — 160 MHz
DC Current Gain (hFE)
30 — 150 x10³
DC Current Gain (hFE)
30 x10³
DC Current Gain (hFE)
10 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
10 nA
Emitter-Base Voltage
6 V
HTS Code
8541.29.0065
Input Capacitance (Cib)
75 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
10 pF
Power Dissipation
5 W
Power Dissipation
1 W
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
150 °C/W
Thermal Resistance Junction-Case
30 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Active | 250V,150mA,1W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage | Box | 500 | LEAD or TIN | No |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| 2N5058_5059.PDF | Device Datasheet |
| Material Composition:TO-39 | Material Composition |
| Package Detail Document:TO-39 | Package Detail Document |
| Product Reliability Data:TO-39 Package Reliability | Product Reliability Data |