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2N5086

50V,50mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP Low Noise

Specifications

Base-Emitter On Voltage (VBE(ON))
0.85 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
50 V
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Voltage
50 V
Collector-Emitter Breakdown Voltage (BVCEO)
50 V
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Voltage (VCEO)
50 V
Continuous Collector Current
50 mA
Current Gain-Bandwidth Product (fT)
40 MHz
DC Current Gain (hFE)
150 x10³
DC Current Gain (hFE)
150 x10³
DC Current Gain (hFE)
150 — 500 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
50 nA
Emitter-Base Voltage
3 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
3 dB
Noise Figure (NF)
3 dB
Output Capacitance (Cob)
4 pF
Power Dissipation
1.5 W
Power Dissipation
625 mW
Small Signal Current Gain (hfe)
150 — 600 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
200 °C/W
Thermal Resistance Junction-Case
83.3 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active50V,50mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP Low NoiseBox2,500LEAD or TINNo
Active50V,50mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP Low NoiseAmmo2,000LEAD or TINNo
Active50V,50mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP Low NoiseAmmo2,000LEAD or TINNo
Active50V,50mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP Low NoiseTape & Reel2,000LEAD or TINNo
Active50V,50mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP Low NoiseTape & Reel2,000LEAD or TINNo

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