Skip to main content
AEM
No image available

2N5089

25V,50mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise

Specifications

Base-Emitter On Voltage (VBE(ON))
0.8 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
30 V
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage
30 V
Collector-Emitter Breakdown Voltage (BVCEO)
25 V
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
25 V
Continuous Collector Current
50 mA
Current Gain-Bandwidth Product (fT)
50 MHz
DC Current Gain (hFE)
450 x10³
DC Current Gain (hFE)
400 x10³
DC Current Gain (hFE)
400 — 1200 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Cutoff Current (IEBO)
50 nA
Emitter-Base Voltage
4.5 V
HTS Code
8541.21.0095
Input Capacitance (Cib)
15 pF
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
2 dB
Output Capacitance (Cob)
4 pF
Power Dissipation
625 mW
Small Signal Current Gain (hfe)
450 — 1800 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
200 °C/W
Thermal Resistance Junction-Case
83.3 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active25V,50mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseBox2,500LEAD or TINNo
Active25V,50mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseBox2,000PBFREE
Active25V,50mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseAmmo2,000LEAD or TINNo
Active25V,50mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseTape & Reel2,000LEAD or TINNo

Resources

Recently Viewed