2N5109
20V,400mA,1W Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator
Specifications
Amplifier Power Gain (Gpe)
11 dB
Case Type
TO-39
Collector-Base Breakdown Voltage (BVCBO)
40 V
Collector-Base Voltage
40 V
Collector-Emitter Breakdown Voltage (BVCER)
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
20 V
Collector-Emitter Cutoff Current (ICEO)
20 µA
Collector-Emitter Cutoff Current (ICEV)
5000 µA
Collector-Emitter Cutoff Current (ICEV)
5000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
20 V
Continuous Base Current
400 mA
Continuous Collector Current
400 mA
Current Gain-Bandwidth Product (fT)
1200 MHz
DC Current Gain (hFE)
40 — 210 x10³
DC Current Gain (hFE)
5 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100000 nA
Emitter-Base Voltage
3 V
HTS Code
8541.29.0065
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
3 dB
Output Capacitance (Cob)
3.5 pF
Power Dissipation
2.5 W
Power Dissipation
1 W
Storage Temperature (Tstg)
-65 — 200 °C
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 20V,400mA,1W Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator | Box | 500 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| 2N5109.PDF | Device Datasheet |
| Material Composition:TO-39 | Material Composition |
| Package Detail Document:TO-39 | Package Detail Document |
| Process Change Notice:CP214 Replaced by CP229 | Process Change Notice |
| Product EOL Notice:RF TRANSISTOR DIE | Product EOL Notice |
| Product Reliability Data:TO-39 Package Reliability | Product Reliability Data |
| Spice Model:Spice Model 2N5109 | Spice Model |