2N5115
3V,6V,50mA,500mW Through-Hole JFET P Channel
Specifications
Case Type
TO-18
Common Source Input Capacitance (Ciss)
25 pF
Common Source Reverse Transfer Capacitance (Crss)
7 pF
Continuous Gate Current
50 mA
Drain Current-Off (ID(OFF))
1000000 pA
Drain Current-Off (ID(OFF))
500 pA
Drain-Gate Voltage
30 V
Drain-Source On Resistance (rds(ON))
100 Ω
Drain-Source On Voltage (VDS(ON))
800 mV
ECCN Code
EAR99
Gate Leakage Current (IGSS)
1000 nA
Gate Leakage Current (IGSS)
0.5 nA
Gate-Source Breakdown Voltage (BVGSS)
30 V
Gate-Source Cutoff Voltage (VGS(OFF))
3 — 6 V
Gate-Source Forward Voltage (VGS(f))
1 V
Gate-Source Voltage (VGS)
30 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 200 °C
Power Dissipation
500 mW
Saturation Drain Current (IDSS)
15000 — 60000 µA
Static Drain-Source On Resistance (rDS(ON))
100 Ω
Storage Temperature (Tstg)
-65 — 200 °C
Turn Off Time (toff)
38 ns
Turn On Time (ton)
30 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 3V,6V,50mA,500mW Through-Hole JFET P Channel | Box | 2,000 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| 2N5114-5116.PDF | Device Datasheet |
| Material Composition:TO-18 | Material Composition |
| Package Detail Document:TO-18 | Package Detail Document |
| Product EOL Notice:JFETS | Product EOL Notice |
| Product Reliability Data:TO-18 Package Reliability | Product Reliability Data |