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AEM

2N5154

80V,5A,1W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

Specifications

Base-Emitter On Voltage (VBE(ON))
1.45 V
Base-Emitter Saturation Voltage (VBE(SAT))
2.2 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.45 V
Case Type
TO-39
Collector-Emitter Breakdown Voltage (BVCES)
100 V
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Cutoff Current (ICES)
1 µA
Collector-Emitter Cutoff Current (ICEV)
500 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
750 mV
Collector-Emitter Voltage (VCEO)
80 V
Collector-Emitter Voltage (VCES)
100 V
Continuous Collector Current
5 A
Current Gain-Bandwidth Product (fT)
70 MHz
DC Current Gain (hFE)
70 — 200 x10³
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
35 x10³
DC Current Gain (hFE)
50 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
1000 nA
Emitter-Base Voltage
6 V
HTS Code
8541.29.0065
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
250 pF
Power Dissipation
10 W
Power Dissipation
1 W
Storage Temperature (Tstg)
-65 — 200 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued80V,5A,1W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/SwitchBox500PBFREE

Resources

ItemType
Analytical Test Report:Bond WireAnalytical Test Report
Analytical Test Report:CapAnalytical Test Report
Analytical Test Report:HeaderAnalytical Test Report
Analytical Test Report:Header AssemblyAnalytical Test Report
Analytical Test Report:Pure Tin SolderAnalytical Test Report
2N5151-5154.PDFDevice Datasheet
Material Composition:TO-39Material Composition
Package Detail Document:TO-39Package Detail Document
Product EOL Notice:2N2483Product EOL Notice
Product Reliability Data:TO-39 Package ReliabilityProduct Reliability Data
Spice Model:Spice Model 2N5154Spice Model

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