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2N5172

25V,100mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise

Specifications

Base-Emitter On Voltage (VBE(ON))
0.5 — 1.2 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.8 V
Case Type
TO-92
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
25 V
Collector-Emitter Breakdown Voltage (BVCEO)
25 V
Collector-Emitter Cutoff Current (ICES)
0.1 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Voltage (VCEO)
25 V
Continuous Collector Current
100 mA
Current Gain-Bandwidth Product (fT)
200 MHz
DC Current Gain (hFE)
100 — 500 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0075
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
1 — 13 pF
Power Dissipation
625 mW
Small Signal Current Gain (hfe)
100 — 750 x10³
Storage Temperature (Tstg)
-65 — 150 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Discontinued25V,100mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseBox2,500LEAD or TINNo
Active25V,100mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseBox2,000PBFREE
Discontinued25V,100mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseAmmo2,000LEAD or TINNo

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