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AEM

2N5179

12V,50mA,200mW Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator

Specifications

Amplifier Power Gain (Gpe)
15 dB
Base-Emitter Saturation Voltage (VBE(SAT))
1 V
Case Type
TO-72
Collector-Base Breakdown Voltage (BVCBO)
20 V
Collector-Base Cutoff Current (ICBO)
1000 nA
Collector-Base Cutoff Current (ICBO)
20 nA
Collector-Base Time Constant (rb'Cc)
3 — 14 ps
Collector-Base Voltage
20 V
Collector-Emitter Breakdown Voltage (BVCEO)
12 V
Collector-Emitter Saturation Voltage (VCE(SAT))
400 mV
Collector-Emitter Voltage (VCEO)
12 V
Continuous Collector Current
50 mA
Current Gain-Bandwidth Product (fT)
900 — 2000 MHz
DC Current Gain (hFE)
25 — 250 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
2.5 V
Emitter-Base Voltage
2.5 V
HTS Code
8541.21.0075
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
4.5 dB
Output Capacitance (Cob)
1 pF
Power Dissipation
300 mW
Power Dissipation
200 mW
Power Output (Pout)
20 mW
Small Signal Current Gain (hfe)
25 — 300 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
870 °C/W
Thermal Resistance Junction-Case
580 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active12V,50mA,200mW Through-Hole Transistor-Small Signal (<=1A) NPN RF OscillatorBox2,000LEAD or TINNo

Resources

ItemType
Analytical Test Report:Aluminum WireAnalytical Test Report
Analytical Test Report:Bond WireAnalytical Test Report
Analytical Test Report:Epoxy AdhesiveAnalytical Test Report
Analytical Test Report:Pure Tin SolderAnalytical Test Report
2N5179.PDFDevice Datasheet
Material Composition:TO-72Material Composition
Package Detail Document:TO-72Package Detail Document
Process Change Notice:HEADER TO-72Process Change Notice
Process Change Notice:TO-72 CaseProcess Change Notice
Process Change Notice:TO-72 CASEProcess Change Notice
Product Reliability Data:TO-72 Package ReliabilityProduct Reliability Data
Spice Model:Spice Model 2N5179Spice Model

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