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2N5223

20V,100mA,310mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1.2 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
25 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
25 V
Collector-Emitter Breakdown Voltage (BVCEO)
20 V
Collector-Emitter Saturation Voltage (VCE(SAT))
700 mV
Collector-Emitter Voltage (VCEO)
20 V
Continuous Collector Current
100 mA
Current Gain-Bandwidth Product (fT)
150 MHz
DC Current Gain (hFE)
50 — 800 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
3 V
Emitter-Base Cutoff Current (IEBO)
500 nA
Emitter-Base Voltage
3 V
HTS Code
8541.21.0075
Junction Temperature (Tj)
-55 — 135 °C
Output Capacitance (Cob)
4 pF
Power Dissipation
310 mW
Small Signal Current Gain (hfe)
50 — 1600 x10³
Storage Temperature (Tstg)
-55 — 135 °C
Thermal Resistance Junction-Ambient
357 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active20V,100mA,310mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseBox2,500LEAD or TINNo

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