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2N5227
30V,50mA,310mW Through-Hole Transistor-Small Signal (<=1A) PNP Low Noise
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
1 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
30 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
30 V
Collector-Emitter Breakdown Voltage (BVCEO)
30 V
Collector-Emitter Saturation Voltage (VCE(SAT))
400 mV
Collector-Emitter Voltage (VCEO)
30 V
Continuous Collector Current
50 mA
Current Gain-Bandwidth Product (fT)
100 MHz
DC Current Gain (hFE)
50 — 700 x10³
DC Current Gain (hFE)
30 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
3 V
Emitter-Base Cutoff Current (IEBO)
500 nA
Emitter-Base Voltage
3 V
HTS Code
8541.21.0075
Junction Temperature (Tj)
-55 — 135 °C
Output Capacitance (Cob)
5 pF
Power Dissipation
310 mW
Small Signal Current Gain (hfe)
50 — 1500 x10³
Storage Temperature (Tstg)
-55 — 135 °C
Thermal Resistance Junction-Ambient
357 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Active | 30V,50mA,310mW Through-Hole Transistor-Small Signal (<=1A) PNP Low Noise | Box | 2,500 | LEAD or TIN | No |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Copper Bonding Wire | Analytical Test Report |
| Analytical Test Report:Copper Wire | Analytical Test Report |
| Analytical Test Report:Epoxy Adhesive | Analytical Test Report |
| Analytical Test Report:Green Epoxy Molding Compound | Analytical Test Report |
| Analytical Test Report:Halogen Free | Analytical Test Report |
| Analytical Test Report:Lead Frame | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder, Sn | Analytical Test Report |
| Analytical Test Report:Tin Plating | Analytical Test Report |
| LSSGP073.PDF | Device Datasheet |
| Material Composition:TO-92 | Material Composition |
| Package Detail Document:TO-92 | Package Detail Document |
| Product Reliability Data:TO-92 Package Reliability | Product Reliability Data |