2N5294
70V,4A,36W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch
Specifications
Base-Emitter On Voltage (VBE(ON))
1.1 V
Case Type
TO-220
Collector-Base Voltage
80 V
Collector-Emitter Breakdown Voltage (BVCER)
75 V
Collector-Emitter Breakdown Voltage (BVCEV)
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
70 V
Collector-Emitter Cutoff Current (ICER)
500 µA
Collector-Emitter Cutoff Current (ICER)
2000 µA
Collector-Emitter Cutoff Current (ICEV)
500 µA
Collector-Emitter Cutoff Current (ICEV)
3000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
70 V
Collector-Emitter Voltage (VCER)
75 V
Collector-Emitter Voltage (VCEV)
80 V
Continuous Base Current
2 A
Continuous Collector Current
4 A
Current Gain-Bandwidth Product (fT)
0.8 MHz
DC Current Gain (hFE)
30 — 120 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
1000000 nA
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 150 °C
Power Dissipation
36 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
70 °C/W
Thermal Resistance Junction-Case
3.47 °C/W
Turn Off Time (toff)
15000 ns
Turn On Time (ton)
5000 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 70V,4A,36W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch | Sleeve | 50 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| Analytical Test Report:Tin Plating | Analytical Test Report |
| 2N5294.PDF | Device Datasheet |
| Material Composition:TO-220 | Material Composition |
| Package Detail Document:TO-220 | Package Detail Document |
| Product EOL Notice:Power transistors bare die and | Product EOL Notice |
| Product Reliability Data:TO-220 Package Reliability | Product Reliability Data |