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AEM

2N5302

60V,30A,200W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

Specifications

Base-Emitter On Voltage (VBE(ON))
3 V
Base-Emitter On Voltage (VBE(ON))
1.7 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.8 V
Base-Emitter Saturation Voltage (VBE(SAT))
2.5 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.7 V
Case Type
TO-3
Collector-Base Cutoff Current (ICBO)
1000000 nA
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Cutoff Current (ICEO)
5000 µA
Collector-Emitter Cutoff Current (ICEV)
1000 µA
Collector-Emitter Cutoff Current (ICEV)
10000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
2000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
3000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
750 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Base Current
7.5 A
Continuous Collector Current
30 A
Current Gain-Bandwidth Product (fT)
2 MHz
DC Current Gain (hFE)
15 — 60 x10³
DC Current Gain (hFE)
5 x10³
DC Current Gain (hFE)
40 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
5000000 nA
Emitter-Base Voltage
5 V
Fall Time (tf)
1000 ns
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 200 °C
Power Dissipation
200 W
Rise Time (tr)
1000 ns
Small Signal Current Gain (hfe)
40 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Storage Time (ts)
2000 ns
Thermal Resistance Junction-Case
0.875 K/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued60V,30A,200W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/SwitchSleeve20PBFREE

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