2N5333
80V,2A,1W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch
Specifications
Base-Emitter On Voltage (VBE(ON))
1.5 V
Case Type
TO-39
Collector-Base Voltage
100 V
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Cutoff Current (ICEO)
50 µA
Collector-Emitter Cutoff Current (ICES)
500 µA
Collector-Emitter Cutoff Current (ICES)
10 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
450 mV
Collector-Emitter Voltage (VCEO)
80 V
Continuous Base Current
1 A
Continuous Collector Current
2 A
Current Gain-Bandwidth Product (fT)
30 MHz
DC Current Gain (hFE)
10 x10³
DC Current Gain (hFE)
30 — 120 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100000 nA
Emitter-Base Cutoff Current (IEBO)
1000 nA
Emitter-Base Voltage
6 V
HTS Code
8541.29.0065
Junction Temperature (Tj)
-65 — 200 °C
Peak Collector Current
5 A
Power Dissipation
1 W
Small Signal Current Gain (hfe)
30 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
175 °C/W
Turn Off Time (toff)
450 ns
Turn On Time (ton)
150 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 80V,2A,1W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch | Box | 500 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| 2N5333.PDF | Device Datasheet |
| Material Composition:TO-39 | Material Composition |
| Package Detail Document:TO-39 | Package Detail Document |
| Product Reliability Data:TO-39 Package Reliability | Product Reliability Data |