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2N5356

25V,350mA,360mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch

Specifications

Base-Emitter On Voltage (VBE(ON))
0.5 — 0.8 V
Base-Emitter Saturation Voltage (VBE(SAT))
2 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.1 V
Case Type
TO-92
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
25 V
Collector-Emitter Breakdown Voltage (BVCEO)
25 V
Collector-Emitter Cutoff Current (ICES)
0.1 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Voltage (VCEO)
25 V
Continuous Collector Current
350 mA
Current Gain-Bandwidth Product (fT)
250 MHz
DC Current Gain (hFE)
75 x10³
DC Current Gain (hFE)
200 x10³
DC Current Gain (hFE)
250 — 500 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
10000 nA
Emitter-Base Voltage
4 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
35 pF
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
8 pF
Peak Collector Current
700 mA
Power Dissipation
360 mW
Small Signal Current Gain (hfe)
200 — 750 x10³
Storage Temperature (Tstg)
-65 — 150 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active25V,350mA,360mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/SwitchAmmo2,000LEAD or TINNo

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