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2N5374

30V,500mA,360mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch

Specifications

Base-Emitter On Voltage (VBE(ON))
1.2 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.3 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
30 V
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Voltage (VCEO)
30 V
Continuous Collector Current
500 mA
Current Gain-Bandwidth Product (fT)
150 MHz
DC Current Gain (hFE)
150 x10³
DC Current Gain (hFE)
200 — 400 x10³
DC Current Gain (hFE)
100 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
50 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0075
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
10 pF
Power Dissipation
360 mW
Storage Temperature (Tstg)
-65 — 150 °C
Turn Off Time (toff)
175 ns
Turn On Time (ton)
50 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active30V,500mA,360mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/SwitchBox2,000PBFREE

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