2N5415
200V,1A,1W Through-Hole Transistor-Small Signal (<=1A) PNP High Voltage
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
1.5 V
Case Type
TO-39
Collector-Base Cutoff Current (ICBO)
50000 nA
Collector-Base Voltage
200 V
Collector-Emitter Breakdown Voltage (BVCEO)
200 V
Collector-Emitter Cutoff Current (ICEO)
50 µA
Collector-Emitter Cutoff Current (ICEV)
50 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
2500 mV
Collector-Emitter Voltage (VCEO)
200 V
Continuous Base Current
500 mA
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
15 MHz
DC Current Gain (hFE)
30 — 150 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
20000 nA
Emitter-Base Voltage
4 V
HTS Code
8541.29.0055
Input Capacitance (Cib)
75 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
15 pF
Power Dissipation
1 W
Second Breakdown Collector Current (Is/b)
0.1 A
Small Signal Current Gain (hfe)
25 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Active | 200V,1A,1W Through-Hole Transistor-Small Signal (<=1A) PNP High Voltage | Box | 500 | LEAD or TIN | No |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| 2N5415_SERIES.PDF | Device Datasheet |
| Material Composition:TO-39 | Material Composition |
| Package Detail Document:TO-39 | Package Detail Document |
| Product Reliability Data:TO-39 Package Reliability | Product Reliability Data |