2N5428
80V,7A,40W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
2 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.2 V
Case Type
TO-66
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Voltage
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Cutoff Current (ICEO)
100 µA
Collector-Emitter Cutoff Current (ICEV)
10 µA
Collector-Emitter Cutoff Current (ICEV)
1000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1200 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
700 mV
Collector-Emitter Voltage (VCEO)
80 V
Continuous Base Current
1 A
Continuous Collector Current
7 A
Current Gain-Bandwidth Product (fT)
30 MHz
DC Current Gain (hFE)
60 — 240 x10³
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
60 x10³
Delay Time (td)
100 ns
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100000 nA
Emitter-Base Voltage
6 V
Fall Time (tf)
200 ns
HTS Code
8541.29.0065
Input Capacitance (Cib)
1000 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
250 pF
Power Dissipation
40 W
Rise Time (tr)
100 ns
Storage Temperature (Tstg)
-65 — 200 °C
Storage Time (ts)
2000 ns
Thermal Resistance Junction-Case
4.37 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 80V,7A,40W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch | Sleeve | 30 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Leads | Analytical Test Report |
| LSSGP086.PDF | Device Datasheet |
| Material Composition:TO-66 | Material Composition |
| Package Detail Document:TO-66 | Package Detail Document |
| Product EOL Notice:2N5428 | Product EOL Notice |
| Product Reliability Data:TO-66 Package Reliablity | Product Reliability Data |