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2N5449

30V,800mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP High Current

Specifications

Base-Emitter On Voltage (VBE(ON))
0.5 — 1 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
50 V
Collector-Base Capacitance (Ccb)
12 pF
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
50 V
Collector-Emitter Breakdown Voltage (BVCEO)
30 V
Collector-Emitter Saturation Voltage (VCE(SAT))
600 mV
Collector-Emitter Voltage (VCEO)
30 V
Continuous Collector Current
800 mA
DC Current Gain (hFE)
100 — 300 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Power Dissipation
625 mW
Small Signal Current Gain (hfe)
5 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
200 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active30V,800mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP High CurrentBox2,000PBFREE
Active30V,800mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP High CurrentAmmo2,000PBFREE
Active30V,800mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP High CurrentTape & Reel2,000PBFREE

Resources

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Analytical Test Report:Tin PlatingAnalytical Test Report
2N5449_SERIES.PDFDevice Datasheet
Material Composition:TO-92Material Composition
Package Detail Document:TO-92Package Detail Document
Product Reliability Data:TO-92 Package ReliabilityProduct Reliability Data

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