Skip to main content
AEM
No image available

2N5460

.75V,6V,10mA,310mW Through-Hole JFET P Channel

Specifications

Case Type
TO-92
Common Source Forward Transadmittance (yfs)
1 — 4 mS
Common Source Input Capacitance (Ciss)
7 pF
Common Source Reverse Transfer Capacitance (Crss)
2 pF
Continuous Gate Current
10 mA
Drain-Gate Voltage
40 V
ECCN Code
EAR99
Equivalent Input Noise Voltage (eN)
115 nV/√Hz
Gate Leakage Current (IGSS)
1000 nA
Gate Leakage Current (IGSS)
5 nA
Gate-Source Breakdown Voltage (BVGSS)
40 V
Gate-Source Cutoff Voltage (VGS(OFF))
0.75 — 6 V
Gate-Source Voltage (VGS)
0.5 — 4 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
2.5 dB
Output Admittance (yos)
75 µS
Power Dissipation
310 mW
Reverse Gate-Source Voltage
40 V
Saturation Drain Current (IDSS)
1000 — 5000 µA
Storage Temperature (Tstg)
-65 — 150 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active.75V,6V,10mA,310mW Through-Hole JFET P ChannelBox2,500PBFREE
Active.75V,6V,10mA,310mW Through-Hole JFET P ChannelAmmo2,000PBFREE
Active.75V,6V,10mA,310mW Through-Hole JFET P ChannelTape & Reel2,000PBFREE

Resources

Recently Viewed