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2N5551

160V,600mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1 V
Base-Emitter Saturation Voltage (VBE(SAT))
1 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
180 V
Collector-Base Cutoff Current (ICBO)
50000 nA
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage
180 V
Collector-Emitter Breakdown Voltage (BVCEO)
160 V
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
150 mV
Collector-Emitter Voltage (VCEO)
160 V
Continuous Collector Current
600 mA
Current Gain-Bandwidth Product (fT)
100 — 300 MHz
DC Current Gain (hFE)
80 — 250 x10³
DC Current Gain (hFE)
30 x10³
DC Current Gain (hFE)
80 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
50 nA
Emitter-Base Voltage
6 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
35 pF
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
8 dB
Output Capacitance (Cob)
6 pF
Power Dissipation
1 W
Power Dissipation
625 mW
Small Signal Current Gain (hfe)
50 — 200 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
200 °C/W
Thermal Resistance Junction-Case
125 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active160V,600mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN High VoltageBox2,000PBFREE
Active160V,600mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN High VoltageAmmo2,000LEAD or TINNo
Active160V,600mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN High VoltageAmmo2,000LEAD or TINNo
Active160V,600mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN High VoltageTape & Reel2,000LEAD or TINNo
Active160V,600mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN High VoltageTape & Reel2,000LEAD or TINNo

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