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2N5555

10mA,360mW Through-Hole JFET N Channel

Specifications

Case Type
TO-92
Common Source Input Capacitance (Ciss)
5 pF
Common Source Reverse Transfer Capacitance (Crss)
1.2 pF
Continuous Gate Current
10 mA
Drain Current-Off (ID(OFF))
2000000 pA
Drain Current-Off (ID(OFF))
10000 pA
Drain Leakage Current (IDGO)
200000 pA
Drain Leakage Current (IDGO)
1000 pA
Drain-Gate Voltage
25 V
Drain-Source On Resistance (rds(ON))
150 Ω
Drain-Source On Voltage (VDS(ON))
1500 mV
Drain-Source Voltage
25 V
ECCN Code
EAR99
Fall Time (tf)
10 ns
Gate Leakage Current (IGSS)
200 nA
Gate Leakage Current (IGSS)
1 nA
Gate-Source Breakdown Voltage (BVGSS)
25 V
Gate-Source Forward Voltage (VGS(f))
1 V
Gate-Source Voltage (VGS)
25 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Power Dissipation
360 mW
Rise Time (tr)
5 ns
Saturation Drain Current (IDSS)
15000 µA
Static Drain-Source On Resistance (rDS(ON))
150 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Turn-off Delay Time (tOFF)
15 ns
Turn-on Delay Time (tON)
5 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued, Stock Only10mA,360mW Through-Hole JFET N ChannelBox2,500PBFREE

Resources

ItemType
Analytical Test Report:Copper Bonding WireAnalytical Test Report
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Analytical Test Report:Green Epoxy Molding CompoundAnalytical Test Report
Analytical Test Report:Halogen FreeAnalytical Test Report
Analytical Test Report:Lead FrameAnalytical Test Report
Analytical Test Report:Pure Tin Solder, SnAnalytical Test Report
Analytical Test Report:Tin PlatingAnalytical Test Report
2N5555.PDFDevice Datasheet
Material Composition:TO-92Material Composition
Package Detail Document:TO-92Package Detail Document
Product Reliability Data:TO-92 Package ReliabilityProduct Reliability Data

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