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AEM

2N5655

250V,500mA,20W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage

Specifications

Base-Emitter On Voltage (VBE(ON))
1 V
Case Type
TO-126
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Voltage
275 V
Collector-Emitter Breakdown Voltage (BVCEO)
250 V
Collector-Emitter Breakdown Voltage (BVCEO)
250 V
Collector-Emitter Cutoff Current (ICEO)
100 µA
Collector-Emitter Cutoff Current (ICEV)
1000 µA
Collector-Emitter Cutoff Current (ICEV)
100 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
2500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
10000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
250 V
Continuous Base Current
250 mA
Continuous Collector Current
500 mA
Current Gain-Bandwidth Product (fT)
10 MHz
DC Current Gain (hFE)
30 — 250 x10³
DC Current Gain (hFE)
15 x10³
DC Current Gain (hFE)
5 x10³
DC Current Gain (hFE)
25 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
10000 nA
Emitter-Base Voltage
6 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
25 pF
Peak Collector Current
1 A
Power Dissipation
20 W
Small Signal Current Gain (hfe)
20 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Case
6.25 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued250V,500mA,20W Through-Hole Transistor-Small Signal (<=1A) NPN High VoltageSleeve50PBFREE

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