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AEM

2N5680

120V,1A,1W Through-Hole Transistor-Small Signal (<=1A) PNP High Current

Specifications

Base-Emitter On Voltage (VBE(ON))
1 V
Case Type
TO-39
Collector-Base Cutoff Current (ICBO)
1000 nA
Collector-Base Voltage
120 V
Collector-Emitter Breakdown Voltage (BVCEO)
120 V
Collector-Emitter Cutoff Current (ICEO)
10 µA
Collector-Emitter Cutoff Current (ICEV)
1 µA
Collector-Emitter Cutoff Current (ICEV)
1000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
600 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
2000 mV
Collector-Emitter Voltage (VCEO)
120 V
Continuous Base Current
500 mA
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
30 MHz
DC Current Gain (hFE)
5 x10³
DC Current Gain (hFE)
40 — 150 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
1000 nA
Emitter-Base Voltage
4 V
HTS Code
8541.90.0000
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
50 pF
Power Dissipation
10 W
Power Dissipation
1 W
Small Signal Current Gain (hfe)
40 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
175 °C/W
Thermal Resistance Junction-Case
17.5 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active120V,1A,1W Through-Hole Transistor-Small Signal (<=1A) PNP High CurrentBox500LEAD or TINNo

Resources

ItemType
Analytical Test Report:Bond WireAnalytical Test Report
Analytical Test Report:CapAnalytical Test Report
Analytical Test Report:HeaderAnalytical Test Report
Analytical Test Report:Header AssemblyAnalytical Test Report
Analytical Test Report:Pure Tin SolderAnalytical Test Report
2N5679-5682.PDFDevice Datasheet
Material Composition:TO-39Material Composition
Package Detail Document:TO-39Package Detail Document
Product Reliability Data:TO-39 Package ReliabilityProduct Reliability Data
Spice Model:Spice Model 2N5680Spice Model

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