2N5745
80V,20A,5W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch
Specifications
Base-Emitter On Voltage (VBE(ON))
2.5 V
Base-Emitter On Voltage (VBE(ON))
1.5 V
Base-Emitter Saturation Voltage (VBE(SAT))
2 V
Base-Emitter Saturation Voltage (VBE(SAT))
2.5 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.7 V
Case Type
TO-3
Collector-Base Cutoff Current (ICBO)
1000000 nA
Collector-Base Voltage
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Cutoff Current (ICEO)
5000 µA
Collector-Emitter Cutoff Current (ICEV)
5000 µA
Collector-Emitter Cutoff Current (ICEV)
10000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
2000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
80 V
Continuous Base Current
7.5 A
Continuous Collector Current
20 A
Current Gain-Bandwidth Product (fT)
2 MHz
DC Current Gain (hFE)
15 — 60 x10³
DC Current Gain (hFE)
5 x10³
DC Current Gain (hFE)
40 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
5000000 nA
Emitter-Base Voltage
5 V
Fall Time (tf)
1000 ns
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 200 °C
Peak Base Current
15 A
Peak Collector Current
50 A
Power Dissipation
200 W
Power Dissipation
5 W
Rise Time (tr)
1000 ns
Small Signal Current Gain (hfe)
40 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Storage Time (ts)
2000 ns
Thermal Resistance Junction-Ambient
35 °C/W
Thermal Resistance Junction-Case
0.875 K/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 80V,20A,5W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch | Sleeve | 20 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Cap and Assembly | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leads | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| 2N4398_SERIES.PDF | Device Datasheet |
| Material Composition:TO-3 | Material Composition |
| Package Detail Document:TO-3 | Package Detail Document |
| Product EOL Notice:Power transistors bare die and | Product EOL Notice |
| Product Reliability Data:TO-3 Package Reliability | Product Reliability Data |