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2N5772

15V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Saturated Switch

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1.2 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.7 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.75 — 0.95 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
40 V
Collector-Base Voltage
40 V
Collector-Emitter Breakdown Voltage (BVCES)
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
15 V
Collector-Emitter Cutoff Current (ICES)
0.5 µA
Collector-Emitter Cutoff Current (ICES)
3 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
280 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Voltage (VCEO)
15 V
Collector-Emitter Voltage (VCES)
40 V
Continuous Collector Current
200 mA
Current Gain-Bandwidth Product (fT)
350 MHz
DC Current Gain (hFE)
25 x10³
DC Current Gain (hFE)
15 x10³
DC Current Gain (hFE)
30 — 120 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Voltage
5 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
8 pF
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
5 pF
Power Dissipation
625 mW
Storage Temperature (Tstg)
-65 — 150 °C
Storage Time (ts)
18 ns
Turn Off Time (toff)
28 ns
Turn On Time (ton)
18 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued, Stock Only15V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Saturated SwitchBox2,500PBFREE

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