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AEM

2N5781

65V,3.5A,1W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

Specifications

Base-Emitter On Voltage (VBE(ON))
1.5 V
Case Type
TO-39
Collector-Base Voltage
80 V
Collector-Emitter Breakdown Voltage (BVCER)
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
65 V
Collector-Emitter Cutoff Current (ICEO)
100 µA
Collector-Emitter Cutoff Current (ICER)
10 µA
Collector-Emitter Cutoff Current (ICER)
1000 µA
Collector-Emitter Cutoff Current (ICEV)
10 µA
Collector-Emitter Cutoff Current (ICEV)
1000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
65 V
Collector-Emitter Voltage (VCER)
80 V
Continuous Base Current
1 A
Continuous Collector Current
3.5 A
Current Gain-Bandwidth Product (fT)
8 — 60 MHz
DC Current Gain (hFE)
4 x10³
DC Current Gain (hFE)
20 — 150 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
10000 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0065
Junction Temperature (Tj)
-65 — 200 °C
Power Dissipation
10 W
Power Dissipation
1 W
Small Signal Current Gain (hfe)
25 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
175 °C/W
Thermal Resistance Junction-Case
17.5 °C/W
Turn Off Time (toff)
2500 ns
Turn On Time (ton)
500 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active65V,3.5A,1W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/SwitchBox500PBFREE

Resources

ItemType
Analytical Test Report:Bond WireAnalytical Test Report
Analytical Test Report:CapAnalytical Test Report
Analytical Test Report:HeaderAnalytical Test Report
Analytical Test Report:Header AssemblyAnalytical Test Report
Analytical Test Report:Pure Tin SolderAnalytical Test Report
2N5781.PDFDevice Datasheet
Material Composition:TO-39Material Composition
Package Detail Document:TO-39Package Detail Document
Product Reliability Data:TO-39 Package ReliabilityProduct Reliability Data

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