2N5794
40V,600mA,500mW Through-Hole Transistor-Small Signal (<=1A) Dual NPN General Purpose Amplifier/Switch
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
1.8 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.6 — 1.2 V
Case Type
TO-78
Collector 1 to Collector 2 Leakage Current (IC1-C2)
1 nA
Collector 2 to Collector 1 Leakage Current (IC2-C1)
1 nA
Collector-Base Breakdown Voltage (BVCBO)
75 V
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Voltage
75 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Saturation Voltage (VCE(SAT))
900 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current
600 mA
Current Gain-Bandwidth Product (fT)
250 MHz
DC Current Gain (hFE)
35 x10³
DC Current Gain (hFE)
50 x10³
DC Current Gain (hFE)
75 x10³
DC Current Gain (hFE)
100 — 300 x10³
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
50 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
10 nA
Emitter-Base Voltage
6 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
25 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
8 pF
Power Dissipation
600 mW
Power Dissipation
1.2 W
Power Dissipation
2 W
Power Dissipation
500 mW
Storage Temperature (Tstg)
-65 — 200 °C
Turn Off Time (toff)
300 ns
Turn On Time (ton)
40 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 40V,600mA,500mW Through-Hole Transistor-Small Signal (<=1A) Dual NPN General Purpose Amplifier/Switch | Box | 100 | PBFREE |
Resources
| Item | Type |
|---|---|
| 2N5793.PDF | Device Datasheet |
| Material Composition:TO-78 | Material Composition |
| Package Detail Document:TO-78 | Package Detail Document |
| Product EOL Notice:TO-78 CASE | Product EOL Notice |