2N5796
60V,600mA,500mW Through-Hole Transistor-Small Signal (<=1A) Dual PNP General Purpose Amplifier/Switch
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
2.6 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.3 V
Case Type
TO-78
Collector 1 to Collector 2 Leakage Current (IC1-C2)
1 nA
Collector 2 to Collector 1 Leakage Current (IC2-C1)
1 nA
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Cutoff Current (ICBO)
20 nA
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1600 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
400 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Collector Current
600 mA
Current Gain-Bandwidth Product (fT)
200 MHz
DC Current Gain (hFE)
75 x10³
DC Current Gain (hFE)
100 x10³
DC Current Gain (hFE)
100 x10³
DC Current Gain (hFE)
100 — 300 x10³
DC Current Gain (hFE)
50 x10³
DC Current Gain (hFE)
50 x10³
Delay Time (td)
12 ns
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
5 V
Fall Time (tf)
40 ns
HTS Code
8541.21.0075
Input Capacitance (Cib)
30 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
8 pF
Power Dissipation
600 mW
Power Dissipation
1.2 W
Power Dissipation
2 W
Power Dissipation
500 mW
Rise Time (tr)
35 ns
Storage Temperature (Tstg)
-65 — 200 °C
Storage Time (ts)
100 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 60V,600mA,500mW Through-Hole Transistor-Small Signal (<=1A) Dual PNP General Purpose Amplifier/Switch | Box | 100 | PBFREE |
Resources
| Item | Type |
|---|---|
| LSSGP070.PDF | Device Datasheet |
| Material Composition:TO-78 | Material Composition |
| Package Detail Document:TO-78 | Package Detail Document |
| Product EOL Notice:TO-78 CASE | Product EOL Notice |