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2N5823

60V,750mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP High Current

Specifications

Base-Emitter On Voltage (VBE(ON))
0.6 — 1.1 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.2 V
Case Type
TO-92
Collector-Base Cutoff Current (ICBO)
15000 nA
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
70 V
Collector-Emitter Breakdown Voltage (BVCES)
70 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Saturation Voltage (VCE(SAT))
750 mV
Collector-Emitter Voltage (VCEO)
60 V
Collector-Emitter Voltage (VCES)
70 V
Continuous Collector Current
750 mA
Current Gain-Bandwidth Product (fT)
120 MHz
DC Current Gain (hFE)
25 x10³
DC Current Gain (hFE)
100 — 250 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
10000 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
55 pF
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
15 pF
Peak Collector Current
1 A
Power Dissipation
1.5 W
Power Dissipation
625 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
200 °C/W
Thermal Resistance Junction-Case
83.3 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active60V,750mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP High CurrentAmmo2,000LEAD or TINNo
Active60V,750mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP High CurrentTape & Reel2,000LEAD or TINNo

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