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AEM

2N5880

80V,15A,160W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

Specifications

Base-Emitter On Voltage (VBE(ON))
1.5 V
Base-Emitter Saturation Voltage (VBE(SAT))
2.5 V
Case Type
TO-3
Collector-Base Cutoff Current (ICBO)
500000 nA
Collector-Base Voltage
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Cutoff Current (ICEO)
1000 µA
Collector-Emitter Cutoff Current (ICEV)
500 µA
Collector-Emitter Cutoff Current (ICEV)
5000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
4000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
80 V
Continuous Base Current
5 A
Continuous Collector Current
15 A
Current Gain-Bandwidth Product (fT)
4 MHz
DC Current Gain (hFE)
20 — 100 x10³
DC Current Gain (hFE)
4 x10³
DC Current Gain (hFE)
35 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
1000000 nA
Emitter-Base Voltage
5 V
Fall Time (tf)
800 ns
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
600 pF
Peak Collector Current
30 A
Power Dissipation
160 W
Rise Time (tr)
700 ns
Small Signal Current Gain (hfe)
20 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Storage Time (ts)
1000 ns
Thermal Resistance Junction-Case
1.1 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Discontinued80V,15A,160W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/SwitchSleeve20TINNo

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