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2N5961

60V,50mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise

Specifications

Base-Emitter On Voltage (VBE(ON))
0.5 — 0.7 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Cutoff Current (ICBO)
2 nA
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Collector Current
50 mA
Current Gain-Bandwidth Product (fT)
100 MHz
DC Current Gain (hFE)
120 x10³
DC Current Gain (hFE)
135 x10³
DC Current Gain (hFE)
150 — 700 x10³
DC Current Gain (hFE)
100 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
7 V
Emitter-Base Cutoff Current (IEBO)
1 nA
Emitter-Base Voltage
7 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
6 pF
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
3 dB
Noise Figure (NF)
3 dB
Noise Figure (NF)
6 dB
Output Capacitance (Cob)
4 pF
Power Dissipation
1.5 W
Power Dissipation
625 mW
Small Signal Current Gain (hfe)
150 — 1000 x10³
Storage Temperature (Tstg)
-65 — 150 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Discontinued60V,50mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseBox2,500LEAD or TINNo

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