Skip to main content
AEM

2N6055

8A,60V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington

Specifications

Base-Emitter On Voltage (VBE(ON))
2.8 V
Base-Emitter Saturation Voltage (VBE(SAT))
4 V
Case Type
TO-3
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Cutoff Current (ICEO)
500 µA
Collector-Emitter Cutoff Current (ICEV)
500 µA
Collector-Emitter Cutoff Current (ICEV)
5000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
3000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
2000 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Base Current
120 mA
Continuous Collector Current
8 A
Current Gain-Bandwidth Product (fT)
4 MHz
DC Current Gain (hFE)
100 x10³
DC Current Gain (hFE)
0.75 — 18 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
2000000 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
200 pF
Peak Collector Current
16 A
Power Dissipation
100 W
Small Signal Current Gain (hfe)
300 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Case
1.75 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Discontinued8A,60V Through-Hole Transistor-Bipolar Power (>1A) NPN DarlingtonSleeve20TINNo

Resources

ItemType
Analytical Test Report:Cap and AssemblyAnalytical Test Report
Analytical Test Report:Die AttachAnalytical Test Report
Analytical Test Report:LeadsAnalytical Test Report
Analytical Test Report:Sn PlatingAnalytical Test Report
2N6053_SERIES.PDFDevice Datasheet
Material Composition:TO-3Material Composition
Package Detail Document:TO-3Package Detail Document
Process Change Notice:2N6059Process Change Notice
Process Change Notice:2N6059Process Change Notice
Product EOL Notice:Power transistors bare die andProduct EOL Notice
Product Reliability Data:TO-3 Package ReliabilityProduct Reliability Data

Recently Viewed