2N6099
60V,10A,1.8W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch
Specifications
Base-Emitter On Voltage (VBE(ON))
1.7 V
Case Type
TO-220
Collector-Base Voltage
70 V
Collector-Emitter Breakdown Voltage (BVCER)
65 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Cutoff Current (ICEO)
2000 µA
Collector-Emitter Cutoff Current (ICEV)
2000 µA
Collector-Emitter Cutoff Current (ICEV)
10000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
2500 mV
Collector-Emitter Voltage (VCEO)
60 V
Collector-Emitter Voltage (VCER)
65 V
Continuous Base Current
4 A
Continuous Collector Current
10 A
DC Current Gain (hFE)
5 x10³
DC Current Gain (hFE)
20 — 80 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
1000000 nA
Emitter-Base Voltage
8 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 150 °C
Power Dissipation
75 W
Power Dissipation
1.8 W
Small Signal Current Gain (hfe)
15 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
70 °C/W
Thermal Resistance Junction-Case
1.67 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Discontinued | 60V,10A,1.8W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch | Sleeve | 50 | TIN | No |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| Analytical Test Report:Tin Plating | Analytical Test Report |
| 2N6099.PDF | Device Datasheet |
| Material Composition:TO-220 | Material Composition |
| Package Detail Document:TO-220 | Package Detail Document |
| Product EOL Notice:Power transistors bare die and | Product EOL Notice |
| Product Reliability Data:TO-220 Package Reliability | Product Reliability Data |