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AEM

2N6250

275V,10A,175W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
2.25 V
Case Type
TO-3
Collector-Base Voltage
375 V
Collector-Emitter Breakdown Voltage (BVCEO)
275 V
Collector-Emitter Breakdown Voltage (BVCER)
300 V
Collector-Emitter Cutoff Current (ICEO)
5000 µA
Collector-Emitter Cutoff Current (ICEV)
5000 µA
Collector-Emitter Cutoff Current (ICEV)
10000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1500 mV
Collector-Emitter Voltage (VCEO)
275 V
Collector-Emitter Voltage (VCER)
300 V
Collector-Emitter Voltage (VCEV)
300 V
Continuous Base Current
10 A
Continuous Collector Current
10 A
Current Gain-Bandwidth Product (fT)
2.5 MHz
DC Current Gain (hFE)
8 — 50 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
1000000 nA
Emitter-Base Voltage
6 V
Fall Time (tf)
1000 ns
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 200 °C
Peak Collector Current
30 A
Power Dissipation
175 W
Rise Time (tr)
2000 ns
Second Breakdown Collector Current (Is/b)
5.8 A
Second Breakdown Energy (ES/b)
2.5 mJ
Storage Temperature (Tstg)
-65 — 200 °C
Storage Time (ts)
3500 ns
Thermal Resistance Junction-Ambient
1 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued275V,10A,175W Through-Hole Transistor-Bipolar Power (>1A) NPN High VoltageSleeve20PBFREE

Resources

ItemType
Analytical Test Report:Cap and AssemblyAnalytical Test Report
Analytical Test Report:Die AttachAnalytical Test Report
Analytical Test Report:LeadsAnalytical Test Report
Analytical Test Report:Sn PlatingAnalytical Test Report
2N6249-6251.PDFDevice Datasheet
Material Composition:TO-3Material Composition
Package Detail Document:TO-3Package Detail Document
Process Change Notice:2N6547Process Change Notice
Product EOL Notice:Power transistors bare die andProduct EOL Notice
Product Reliability Data:TO-3 Package ReliabilityProduct Reliability Data

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