2N6251
350V,10A,175W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
2.25 V
Case Type
TO-3
Collector-Base Voltage
450 V
Collector-Emitter Breakdown Voltage (BVCER)
375 V
Collector-Emitter Breakdown Voltage (BVCEO)
350 V
Collector-Emitter Cutoff Current (ICEO)
5000 µA
Collector-Emitter Cutoff Current (ICEV)
5000 µA
Collector-Emitter Cutoff Current (ICEV)
10000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1500 mV
Collector-Emitter Voltage (VCEO)
350 V
Collector-Emitter Voltage (VCER)
375 V
Collector-Emitter Voltage (VCEV)
375 V
Continuous Base Current
10 A
Continuous Collector Current
10 A
Current Gain-Bandwidth Product (fT)
2.5 MHz
DC Current Gain (hFE)
6 — 50 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
1000000 nA
Emitter-Base Voltage
6 V
Fall Time (tf)
1000 ns
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 200 °C
Peak Collector Current
30 A
Power Dissipation
175 W
Rise Time (tr)
2000 ns
Second Breakdown Collector Current (Is/b)
5.8 A
Second Breakdown Energy (ES/b)
2.5 mJ
Storage Temperature (Tstg)
-65 — 200 °C
Storage Time (ts)
3500 ns
Thermal Resistance Junction-Ambient
1 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 350V,10A,175W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage | Sleeve | 20 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Cap and Assembly | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leads | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| 2N6249-6251.PDF | Device Datasheet |
| Material Composition:TO-3 | Material Composition |
| Package Detail Document:TO-3 | Package Detail Document |
| Product EOL Notice:Power transistors bare die and | Product EOL Notice |
| Product Reliability Data:TO-3 Package Reliability | Product Reliability Data |