2N6296
4A,60V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington
Specifications
Base-Emitter On Voltage (VBE(ON))
2.8 V
Base-Emitter Saturation Voltage (VBE(SAT))
4 V
Case Type
TO-66
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Cutoff Current (ICEO)
500 µA
Collector-Emitter Cutoff Current (ICEV)
500 µA
Collector-Emitter Cutoff Current (ICEV)
5000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
3000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
2000 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Base Current
80 mA
Continuous Collector Current
4 A
Current Gain-Bandwidth Product (fT)
4 MHz
DC Current Gain (hFE)
100 x10³
DC Current Gain (hFE)
0.75 — 18 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
2000000 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
200 pF
Peak Collector Current
8 A
Power Dissipation
50 W
Small Signal Current Gain (hfe)
300 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Case
3.5 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Active | 4A,60V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington | Sleeve | 30 | LEAD or TIN | No |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Leads | Analytical Test Report |
| 2N6294-6297.PDF | Device Datasheet |
| Material Composition:TO-66 | Material Composition |
| Package Detail Document:TO-66 | Package Detail Document |
| Process Change Notice:CP517 replaced by CP527 | Process Change Notice |
| Product Reliability Data:TO-66 Package Reliablity | Product Reliability Data |