2N6308
350V,8A,125W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage
Specifications
Base-Emitter On Voltage (VBE(ON))
1.5 V
Base-Emitter Saturation Voltage (VBE(SAT))
2.5 V
Case Type
TO-3
Collector-Base Voltage
700 V
Collector-Emitter Breakdown Voltage (BVCEO)
350 V
Collector-Emitter Cutoff Current (ICEO)
500 µA
Collector-Emitter Cutoff Current (ICEV)
500 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
5000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1500 mV
Collector-Emitter Voltage (VCEO)
350 V
Continuous Base Current
4 A
Continuous Collector Current
8 A
Current Gain-Bandwidth Product (fT)
5 MHz
DC Current Gain (hFE)
3 x10³
DC Current Gain (hFE)
12 — 60 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
1000000 nA
Emitter-Base Voltage
8 V
Fall Time (tf)
400 ns
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
250 pF
Power Dissipation
125 W
Rise Time (tr)
600 ns
Storage Temperature (Tstg)
-65 — 200 °C
Storage Time (ts)
1600 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 350V,8A,125W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage | Sleeve | 20 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Cap and Assembly | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leads | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| 2N6306-6308.PDF | Device Datasheet |
| Material Composition:TO-3 | Material Composition |
| Package Detail Document:TO-3 | Package Detail Document |
| Process Change Notice:2N6545 | Process Change Notice |
| Product EOL Notice:Power transistors bare die and | Product EOL Notice |
| Product Reliability Data:TO-3 Package Reliability | Product Reliability Data |