2N6421
250V,2A,35W Through-Hole Transistor-Bipolar Power (>1A) PNP High Voltage
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
1.4 V
Case Type
TO-66
Collector-Base Voltage
375 V
Collector-Emitter Breakdown Voltage (BVCEO)
250 V
Collector-Emitter Cutoff Current (ICEO)
5000 µA
Collector-Emitter Cutoff Current (ICEV)
3000 µA
Collector-Emitter Cutoff Current (ICEV)
1000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
750 mV
Collector-Emitter Voltage (VCEO)
250 V
Continuous Base Current
1 A
Continuous Collector Current
2 A
Current Gain-Bandwidth Product (fT)
10 MHz
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
8 — 80 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
500000 nA
Emitter-Base Voltage
6 V
Fall Time (tf)
3000 ns
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
120 pF
Peak Collector Current
5 A
Power Dissipation
35 W
Rise Time (tr)
3000 ns
Second Breakdown Collector Current (Is/b)
0.15 A
Small Signal Current Gain (hfe)
25 — 350 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Storage Time (ts)
4000 ns
Thermal Resistance Junction-Case
5 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 250V,2A,35W Through-Hole Transistor-Bipolar Power (>1A) PNP High Voltage | Sleeve | 30 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Leads | Analytical Test Report |
| 2N6420-6423.PDF | Device Datasheet |
| Material Composition:TO-66 | Material Composition |
| Package Detail Document:TO-66 | Package Detail Document |
| Product EOL Notice:2N6421 | Product EOL Notice |
| Product Reliability Data:TO-66 Package Reliablity | Product Reliability Data |