Skip to main content
AEM
No image available

2N6428

50V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise

Specifications

Base-Emitter On Voltage (VBE(ON))
0.56 — 0.66 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
50 V
Collector-Emitter Cutoff Current (ICEO)
0.025 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
600 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Voltage (VCEO)
50 V
Continuous Collector Current
200 mA
Current Gain-Bandwidth Product (fT)
100 — 700 MHz
DC Current Gain (hFE)
250 — 650 x10³
DC Current Gain (hFE)
250 x10³
DC Current Gain (hFE)
250 x10³
DC Current Gain (hFE)
250 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
10 nA
Emitter-Base Voltage
6 V
HTS Code
8541.21.0075
Input Impedance Common Emitter (hie)
3 — 30 kΩ
Junction Temperature (Tj)
-65 — 150 °C
Output Admittance Common Emitter (hoe)
5 — 50 µS
Output Capacitance (Cob)
3 pF
Power Dissipation
1.5 W
Power Dissipation
625 mW
Small Signal Current Gain (hfe)
200 — 800 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
200 °C/W
Thermal Resistance Junction-Case
83.3 °C/W
Voltage Feedback Ratio Common Emitter (hre)
0.2 — 2 x10⁻³

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active50V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseBox2,500LEAD or TINNo
Active50V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseAmmo2,000LEAD or TINNo
Active50V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseTape & Reel2,000LEAD or TINNo

Resources

Recently Viewed