2N6432
200V,500mA,500mW Through-Hole Transistor-Small Signal (<=1A) PNP High Voltage
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
0.9 V
Case Type
TO-18
Collector-Base Breakdown Voltage (BVCBO)
200 V
Collector-Base Cutoff Current (ICBO)
250 nA
Collector-Base Voltage
200 V
Collector-Emitter Breakdown Voltage (BVCEO)
200 V
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
200 V
Continuous Collector Current
500 mA
Current Gain-Bandwidth Product (fT)
50 MHz
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
30 — 150 x10³
DC Current Gain (hFE)
25 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
6 pF
Power Dissipation
500 mW
Power Dissipation
1.8 W
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
350 °C/W
Thermal Resistance Junction-Case
97.2 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Active | 200V,500mA,500mW Through-Hole Transistor-Small Signal (<=1A) PNP High Voltage | Box | 2,000 | LEAD or TIN | No |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| 2N6430-6433.PDF | Device Datasheet |
| Material Composition:TO-18 | Material Composition |
| Package Detail Document:TO-18 | Package Detail Document |
| Product Reliability Data:TO-18 Package Reliability | Product Reliability Data |