2N6467
100V,4A,40W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch
Specifications
Base-Emitter On Voltage (VBE(ON))
3.5 V
Base-Emitter On Voltage (VBE(ON))
2 V
Case Type
TO-66
Collector-Base Voltage
110 V
Collector-Emitter Breakdown Voltage (BVCER)
105 V
Collector-Emitter Breakdown Voltage (BVCEV)
110 V
Collector-Emitter Breakdown Voltage (BVCEO)
100 V
Collector-Emitter Cutoff Current (ICEO)
1000 µA
Collector-Emitter Cutoff Current (ICER)
100 µA
Collector-Emitter Cutoff Current (ICEV)
100 µA
Collector-Emitter Cutoff Current (ICEV)
2000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
4000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1200 mV
Collector-Emitter Voltage (VCEO)
100 V
Collector-Emitter Voltage (VCER)
105 V
Collector-Emitter Voltage (VCEV)
110 V
Continuous Base Current
2 A
Continuous Collector Current
4 A
Current Gain-Bandwidth Product (fT)
5 MHz
DC Current Gain (hFE)
5 x10³
DC Current Gain (hFE)
15 — 150 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100000 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 200 °C
Power Dissipation
40 W
Small Signal Current Gain (hfe)
25 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Case
4.3 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 100V,4A,40W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch | Sleeve | 30 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Leads | Analytical Test Report |
| LSSGP086.PDF | Device Datasheet |
| Material Composition:TO-66 | Material Composition |
| Package Detail Document:TO-66 | Package Detail Document |
| Product EOL Notice:BCY79-VIII | Product EOL Notice |
| Product Reliability Data:TO-66 Package Reliablity | Product Reliability Data |