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AEM

2N6474

120V,4A,40W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

Specifications

Base-Emitter On Voltage (VBE(ON))
3.5 V
Base-Emitter On Voltage (VBE(ON))
2 V
Case Type
TO-220
Collector-Base Voltage
130 V
Collector-Emitter Breakdown Voltage (BVCER)
130 V
Collector-Emitter Breakdown Voltage (BVCEO)
120 V
Collector-Emitter Cutoff Current (ICEO)
1000 µA
Collector-Emitter Cutoff Current (ICER)
100 µA
Collector-Emitter Cutoff Current (ICER)
2000 µA
Collector-Emitter Cutoff Current (ICEV)
100 µA
Collector-Emitter Cutoff Current (ICEV)
2000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
2500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1200 mV
Collector-Emitter Voltage (VCEO)
120 V
Collector-Emitter Voltage (VCER)
130 V
Continuous Base Current
2 A
Continuous Collector Current
4 A
Current Gain-Bandwidth Product (fT)
4 MHz
DC Current Gain (hFE)
15 — 150 x10³
DC Current Gain (hFE)
2 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
1000000 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
250 pF
Power Dissipation
40 W
Small Signal Current Gain (hfe)
20 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Case
3.125 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued120V,4A,40W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/SwitchSleeve50PBFREE

Resources

ItemType
Analytical Test Report:Die AttachAnalytical Test Report
Analytical Test Report:LeadframeAnalytical Test Report
Analytical Test Report:Sn PlatingAnalytical Test Report
Analytical Test Report:Tin PlatingAnalytical Test Report
2N6473-6476.PDFDevice Datasheet
Material Composition:TO-220Material Composition
Package Detail Document:TO-220Package Detail Document
Product EOL Notice:2N6478Product EOL Notice
Product Reliability Data:TO-220 Package ReliabilityProduct Reliability Data

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