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AEM

2N6475

100V,4A,40W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

Specifications

Base-Emitter On Voltage (VBE(ON))
3.5 V
Base-Emitter On Voltage (VBE(ON))
2 V
Case Type
TO-220
Collector-Base Voltage
110 V
Collector-Emitter Breakdown Voltage (BVCER)
110 V
Collector-Emitter Breakdown Voltage (BVCEO)
100 V
Collector-Emitter Cutoff Current (ICEO)
1000 µA
Collector-Emitter Cutoff Current (ICER)
100 µA
Collector-Emitter Cutoff Current (ICER)
2000 µA
Collector-Emitter Cutoff Current (ICEV)
100 µA
Collector-Emitter Cutoff Current (ICEV)
2000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
2500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1200 mV
Collector-Emitter Voltage (VCEO)
100 V
Collector-Emitter Voltage (VCER)
110 V
Continuous Base Current
2 A
Continuous Collector Current
4 A
Current Gain-Bandwidth Product (fT)
5 MHz
DC Current Gain (hFE)
15 — 150 x10³
DC Current Gain (hFE)
2 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
1000000 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
250 pF
Power Dissipation
40 W
Small Signal Current Gain (hfe)
20 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Case
3.125 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued100V,4A,40W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/SwitchSleeve50PBFREE

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