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AEM

2N6498

300V,5A,80W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
2.5 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.5 V
Case Type
TO-220
Collector-Base Voltage
400 V
Collector-Emitter Breakdown Voltage (BVCEO)
300 V
Collector-Emitter Cutoff Current (ICEV)
10000 µA
Collector-Emitter Cutoff Current (ICEV)
1000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
5000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1250 mV
Collector-Emitter Voltage (VCEO)
300 V
Continuous Base Current
2 A
Continuous Collector Current
5 A
Current Gain-Bandwidth Product (fT)
5 MHz
DC Current Gain (hFE)
3 x10³
DC Current Gain (hFE)
10 — 75 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
1000000 nA
Emitter-Base Voltage
6 V
Fall Time (tf)
1000 ns
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
150 pF
Peak Collector Current
10 A
Power Dissipation
80 W
Rise Time (tr)
1000 ns
Storage Temperature (Tstg)
-65 — 150 °C
Storage Time (ts)
2500 ns
Thermal Resistance Junction-Case
1.56 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued300V,5A,80W Through-Hole Transistor-Bipolar Power (>1A) NPN High VoltageSleeve50PBFREE
Discontinued300V,5A,80W Through-Hole Transistor-Bipolar Power (>1A) NPN High VoltageSleeve50PBFREE

Resources

ItemType
Analytical Test Report:Die AttachAnalytical Test Report
Analytical Test Report:LeadframeAnalytical Test Report
Analytical Test Report:Sn PlatingAnalytical Test Report
Analytical Test Report:Tin PlatingAnalytical Test Report
2N6497-6499.PDFDevice Datasheet
Material Composition:TO-220Material Composition
Package Detail Document:TO-220Package Detail Document
Product EOL Notice:Power transistors bare die andProduct EOL Notice
Product Reliability Data:TO-220 Package ReliabilityProduct Reliability Data
Spice Model:Spice Model 2N6498Spice Model

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