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2N6520

350V,500mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP High Voltage

Specifications

Base-Emitter On Voltage (VBE(ON))
2 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.85 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.9 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.75 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
350 V
Collector-Base Capacitance (Ccb)
6 pF
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage
350 V
Collector-Emitter Breakdown Voltage (BVCEO)
350 V
Collector-Emitter Saturation Voltage (VCE(SAT))
350 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Voltage (VCEO)
350 V
Continuous Base Current
250 mA
Continuous Collector Current
500 mA
Current Gain-Bandwidth Product (fT)
40 — 200 MHz
DC Current Gain (hFE)
30 x10³
DC Current Gain (hFE)
30 — 200 x10³
DC Current Gain (hFE)
20 — 200 x10³
DC Current Gain (hFE)
15 x10³
DC Current Gain (hFE)
20 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Capacitance (Cce)
100 pF
Emitter-Base Cutoff Current (IEBO)
50 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0075
Junction Temperature (Tj)
-65 — 150 °C
Power Dissipation
625 mW
Storage Temperature (Tstg)
-65 — 150 °C
Turn Off Time (toff)
3500 ns
Turn On Time (ton)
200 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active350V,500mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP High VoltageBox2,500LEAD or TINNo
Active350V,500mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP High VoltageAmmo2,000LEAD or TINNo
Active350V,500mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP High VoltageTape & Reel2,000LEAD or TINNo
Active350V,500mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP High VoltageTape & Reel2,000PBFREE

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